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Silicon quantum dots formation in annealed a-SiOxNy:H single layers and a-Si/SiO2 multilayers grown by PECVD: Structural and photoluminiscence properties

Citace:
CALTA, P., AGBO, S., ŠUTTA, P., MEDLÍN, R., NETRVALOVÁ, M., SAVKOVÁ, J. Silicon quantum dots formation in annealed a-SiOxNy:H single layers and a-Si/SiO2 multilayers grown by PECVD: Structural and photoluminiscence properties. 2015.
Druh: PŘEDNÁŠKA, POSTER
Jazyk publikace: eng
Anglický název: Silicon quantum dots formation in annealed a-SiOxNy:H single layers and a-Si/SiO2 multilayers grown by PECVD: Structural and photoluminiscence properties
Rok vydání: 2015
Autoři: Ing. Pavel Calta Ph.D. , S. Agbo , Doc. RNDr. Pavol Šutta Ph.D. , Ing. Rostislav Medlín Ph.D. , Ing. Marie Netrvalová Ph.D. , Ing. Jarmila Savková Ph.D.
Abstrakt EN: Silicon nanostructures embedded in dielectric matrix have interesting possible applications in new photovoltaic devices where they could be used as absorbers (multi-band gap approach). Variation in band-gap of thin film silicon-based materials through the use of quantum confinement in Si quantum dots is cheap and very promising route towards the third generation of silicon photovoltaic devices such as all-Si based tandem solar cells with high efficiency. Size-controlled silicon nanocrystals have been fabricated by step-by-step thermal annealing post-deposition treatment (up to 1100°C) of these as-deposited a-SiOxNy:H single layers and a-Si:H/SiO2 multilayers prepared by plasma enhanced chemical vapor deposition (PECVD).single- and multilayers.
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